p-channel enhancement mode mosfet feature ? - 20 v/-3a, r ds(on) = 1 2 0m(max) @v gs = -4.5v. r ds(on) = 15 0m(max) @v gs = -2.5v. ? super high dense cell design for extremely low r ds(on) ? reliable and rugged ? sot-23 for surface mount package sot-23 applications power management portable equipment and battery powered systems. absolute maximum ratings t a =25 unless otherwise noted parameter symbol limit units drain-source voltage v ds - 20 v gate-source voltage v gs 10 v drain current-continuous i d -3 a electrical characteristics t a =25 unless otherwise noted parameter symbol test conditions min typ. max units off characteristics drain to source breakdown voltage bvdss vgs=0v, id=-250 a - 20 - - v zero-gate voltage drain current idss vds=- 20 v, vgs=0v - - - 1 a gate body leakage current, forward igssf vgs= 10 v, vds=0v - - 100 na gate body leakage current, reverse igssr vgs=- 10 v, vds=0v - - -100 na on characteristics gate threshold voltage vgs(th) vgs= vds, id=-250a -0.4 - -1. 0 v static drain-source on-resistance rds(on) vgs =-4.5v, id =-3.0 a - -- 1 2 0 m vgs =-2.5v, id =-2.0 a - -- 15 0 m drain-source diode characteristics and maximum ratings drain-source diode forward voltage vsd vgs =0v, is=-1.25 a -1. 2 v sales@zpsemi.com www.zpsemi.com SI2301 1 of 6
typical characteristics 0 2 4 6 8 10 12 14 0 1 2 3 4 5 -vds,drain-source voltage(v) - i d , d r a i n c u r r e n t ( a ) 0 2 4 6 8 10 12 0 1 2 3 4 -vgs,gate-to-source voltage (v) - i d , d r a i n c u r r e n t ( a ) figure 1 output characteristics figure 2 transfer characteristics 22 22.2 22.4 22.6 22.8 23 23.2 0 50 100 150 tj,junction temperature() - b v d s s , n o r m a l i z e d d r a i n - s o u r c e b r e a k d o w n v o l t a g e ( v ) 0.8 0.9 1 1.1 1.2 1.3 0 50 100 150 tj,junction temperature() - v t h , n o m a l i z e d g a t e - s o u r c e t h r e s h o l d v o l t a g e ( v ) figure 3 breakdown voltage variation figure 4 gate threshold variation with temperature with temperature vgs=2.5v vgs=2.0v vgs=3 3.5 4v 4.5v tj 150 tj 25 i d=250ua id=250ua sales@zpsemi.com www.zpsemi.com SI2301 2 of 6
typical characteristics 0.1 0.105 0.11 0.115 0.12 0.125 0 50 100 150 tj,junction temperature() r d s ( o n ) , n o r m a l i z e d o n - r e s i s t a n c e ( ) 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 5 10 15 20 - id-drain current(a) r d s ( o n ) - o n r e s i s t a n c e ( ) figure 5 on-resistance variation figure 6 on-resistance vs. drain current with temperature 0 0.05 0.1 0.15 0.2 0.25 0.3 1 2 3 4 5 - vgs,gate-to-source voltage (v) r d s ( o n ) , o n - r e s i s t a n c e ( ) 0.1 1 10 100 1 2 3 4 5 -vsd,body diode forward voltage(v) - i s , s o u r c e - d r a i n c u r r e n t ( a ) figure 7 on-resistance vs. gate-to-source figure 8 source-drain diode forward voltage voltage -3.0v/-2.0a vgs=-2.5v vgs=-4.5v id=-3a tj 150 tj 25 id=-2a sales@zpsemi.com www.zpsemi.com SI2301 3 of 6
package outline dimensions (unit: mm) sot-23 sales@zpsemi.com www.zpsemi.com SI2301 4 of 6
sot-23 carrier tape sales@zpsemi.com www.zpsemi.com SI2301 5 of 6
sot-23 carrier reel sales@zpsemi.com www.zpsemi.com SI2301 6 of 6
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